Part Details for BUZ71FI by STMicroelectronics
Results Overview of BUZ71FI by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
BUZ71FI Information
BUZ71FI by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ71FI
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for BUZ71FI
BUZ71FI CAD Models
BUZ71FI Part Data Attributes
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BUZ71FI
STMicroelectronics
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Datasheet
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BUZ71FI
STMicroelectronics
12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 30 W | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 145 ns | |
| Turn-on Time-Max (ton) | 95 ns |
Alternate Parts for BUZ71FI
This table gives cross-reference parts and alternative options found for BUZ71FI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ71FI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFZ20FI | STMicroelectronics | Check for Price | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | BUZ71FI vs IRFZ20FI |
BUZ71FI Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BUZ71FI is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely up to 100 kHz with a maximum voltage of 500 V and a maximum current of 1 A.
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To ensure proper thermal management, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. The device's thermal pad should be soldered to the heat sink, and the PCB should be designed to minimize thermal resistance. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow.
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The recommended gate drive voltage for the BUZ71FI is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
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The BUZ71FI is a commercial-grade device, and its suitability for high-reliability or aerospace applications depends on the specific requirements of the project. Engineers should consult STMicroelectronics' documentation and evaluate the device's performance, reliability, and radiation hardness to determine its suitability for their application.
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To protect the BUZ71FI from ESD, handle the device with anti-static wrist straps, mats, or other ESD protection devices. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection components, such as TVS diodes or resistors, to the circuit.