Part Details for BUZ50A-220M by TT Electronics Power and Hybrid / Semelab Limited
Results Overview of BUZ50A-220M by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BUZ50A-220M Information
BUZ50A-220M by TT Electronics Power and Hybrid / Semelab Limited is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUZ50A-220M
BUZ50A-220M CAD Models
BUZ50A-220M Part Data Attributes
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BUZ50A-220M
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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BUZ50A-220M
TT Electronics Power and Hybrid / Semelab Limited
1A, 1000V, 10ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | TO-257AB | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AB | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ50A-220M
This table gives cross-reference parts and alternative options found for BUZ50A-220M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ50A-220M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ50A-TO220MR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 1000V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ50A-220M vs BUZ50A-TO220MR1 |
| BUZ50A-220M | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN | BUZ50A-220M vs BUZ50A-220M |
| BUZ50A-TO220M | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET | BUZ50A-220M vs BUZ50A-TO220M |
| BUZ50A-220MR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 1A, 1000V, 10ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN | BUZ50A-220M vs BUZ50A-220MR1 |
| BUZ50A-220MR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN | BUZ50A-220M vs BUZ50A-220MR1 |