Part Details for BUZ20 by Rochester Electronics LLC
Results Overview of BUZ20 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ20 Information
BUZ20 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUZ20
BUZ20 CAD Models
BUZ20 Part Data Attributes
|
|
BUZ20
Rochester Electronics LLC
Buy Now
Datasheet
|
Compare Parts:
BUZ20
Rochester Electronics LLC
13.5A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 AB, TO-220AB, 3 PIN
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 59 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 54 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ20
This table gives cross-reference parts and alternative options found for BUZ20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ20 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ20 vs BUZ20 |
| IRF520N | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ20 vs IRF520N |
| IRF533 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | BUZ20 vs IRF533 |
| IRF532 | Motorola Mobility LLC | Check for Price | 12A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | BUZ20 vs IRF532 |
| IRF530 | Motorola Mobility LLC | Check for Price | 14A, 100V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | BUZ20 vs IRF530 |
| IRF531 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | BUZ20 vs IRF531 |
| BUZ20 | STMicroelectronics | Check for Price | 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | BUZ20 vs BUZ20 |
| IRF530 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | BUZ20 vs IRF530 |