Part Details for BUZ11A by STMicroelectronics
Results Overview of BUZ11A by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ11A Information
BUZ11A by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ11A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB | 15033 |
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$0.7487 / $1.7825 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB | 1044 |
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$1.0431 / $2.7816 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB | 128 |
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$3.7000 / $6.0000 | Buy Now |
Part Details for BUZ11A
BUZ11A CAD Models
BUZ11A Part Data Attributes
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BUZ11A
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
BUZ11A
STMicroelectronics
26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 95 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 450 ns | |
| Turn-on Time-Max (ton) | 175 ns |
Alternate Parts for BUZ11A
This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ10 | Freescale Semiconductor | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-220AB | BUZ11A vs BUZ10 |
| BUZ10 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | BUZ11A vs BUZ10 |
| IRFZ30 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | BUZ11A vs IRFZ30 |
| BUZ11A | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | BUZ11A vs BUZ11A |
| BUZ11A | Motorola Mobility LLC | Check for Price | 25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | BUZ11A vs BUZ11A |
| IRFZ30 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ11A vs IRFZ30 |
| BUZ11A | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ11A vs BUZ11A |
| BUZ11A | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET | BUZ11A vs BUZ11A |
| BUZ11A | Siemens | Check for Price | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ11A vs BUZ11A |
BUZ11A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the BUZ11A is not explicitly stated in the datasheet. However, STMicroelectronics provides a Safe Operating Area (SOA) curve in the application note AN457, which can be used to determine the maximum safe operating area for a given application.
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The thermal resistance of the BUZ11A can be calculated using the thermal resistance values provided in the datasheet (RthJC and RthJA) and the application-specific thermal interface material and layout. A thermal simulation tool or a thermal resistance calculator can be used to estimate the thermal resistance.
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STMicroelectronics provides a recommended PCB layout and thermal management guidelines in the application note AN457. The guidelines include recommendations for copper thickness, thermal vias, and heat sink design to ensure optimal thermal performance.
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Yes, the BUZ11A is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is suitable for use in harsh environments. However, additional testing and validation may be required to ensure compliance with specific industry standards.
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The BUZ11A requires a specific biasing and configuration to ensure optimal performance. STMicroelectronics provides a recommended biasing and configuration scheme in the datasheet and application notes. Additionally, a spice model is available to simulate the device behavior and optimize the design.