Part Details for BUK7Y4R8-60EX by NXP Semiconductors
Results Overview of BUK7Y4R8-60EX by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BUK7Y4R8-60EX Information
BUK7Y4R8-60EX by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUK7Y4R8-60EX
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1502 |
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RFQ |
Part Details for BUK7Y4R8-60EX
BUK7Y4R8-60EX CAD Models
BUK7Y4R8-60EX Part Data Attributes
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BUK7Y4R8-60EX
NXP Semiconductors
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Datasheet
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BUK7Y4R8-60EX
NXP Semiconductors
BUK7Y4R8-60E - N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOIC | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 100 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 238 W | |
Surface Mount | YES |
BUK7Y4R8-60EX Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BUK7Y4R8-60EX is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, follow the recommended application circuit in the datasheet, and make sure to provide a stable voltage supply within the specified range (VGS = 0 to 10 V, VDS = 0 to 60 V). Additionally, ensure the gate-source voltage (VGS) is within the recommended range (±10 V) to prevent damage or malfunction.
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For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact, and use wide traces to minimize resistance and inductance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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Yes, the BUK7Y4R8-60EX is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased, and the PCB layout is optimized for high-frequency operation. Additionally, consider using a gate driver with a low output impedance to minimize switching losses.
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To protect the BUK7Y4R8-60EX from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-protected package. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from ESD events.