Datasheets
BUK7Y4R8-60EX by:

BUK7Y4R8-60E - N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin

Part Details for BUK7Y4R8-60EX by NXP Semiconductors

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy

BUK7Y4R8-60EX Information

BUK7Y4R8-60EX by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BUK7Y4R8-60EX

Part # Distributor Description Stock Price Buy
Vyrian Transistors 1502
RFQ

Part Details for BUK7Y4R8-60EX

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BUK7Y4R8-60EX Part Data Attributes

BUK7Y4R8-60EX NXP Semiconductors
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BUK7Y4R8-60EX NXP Semiconductors BUK7Y4R8-60E - N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 100 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 238 W
Surface Mount YES

BUK7Y4R8-60EX Related Parts

BUK7Y4R8-60EX Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BUK7Y4R8-60EX is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, follow the recommended application circuit in the datasheet, and make sure to provide a stable voltage supply within the specified range (VGS = 0 to 10 V, VDS = 0 to 60 V). Additionally, ensure the gate-source voltage (VGS) is within the recommended range (±10 V) to prevent damage or malfunction.

  • For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact, and use wide traces to minimize resistance and inductance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.

  • Yes, the BUK7Y4R8-60EX is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased, and the PCB layout is optimized for high-frequency operation. Additionally, consider using a gate driver with a low output impedance to minimize switching losses.

  • To protect the BUK7Y4R8-60EX from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-protected package. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from ESD events.

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