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N-channel TrenchMOS standard level FET@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUK7Y20-30B,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BUK7Y20-30B,115-1727-ND
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DigiKey | NEXPERIA BUK7Y20 - N-CHANNEL TRE Min Qty: 907 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
13500 In Stock |
|
$0.3300 | Buy Now |
DISTI #
85969410
|
Verical | Trans MOSFET N-CH 30V 39.5A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R Min Qty: 1137 Package Multiple: 1 Date Code: 2201 | Americas - 13500 |
|
$0.2465 / $0.3300 | Buy Now |
|
Rochester Electronics | N-channel TrenchMOS standard level FET RoHS: Compliant Status: Obsolete Min Qty: 1 | 13500 |
|
$0.1972 / $0.3181 | Buy Now |
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BUK7Y20-30B,115
Nexperia
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Datasheet
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BUK7Y20-30B,115
Nexperia
N-channel TrenchMOS standard level FET@en-us SOIC 4-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | LFPAK-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 39.5 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 158 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the BUK7Y20-30B,115 is -55°C to 175°C.
To ensure safe operating area, follow the guidelines in the datasheet, considering factors like voltage, current, and temperature. Additionally, use a thermal model to simulate the device's behavior under various operating conditions.
The recommended gate drive voltage for the BUK7Y20-30B,115 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To minimize power losses, optimize the gate drive circuitry, use a low-inductance layout, and ensure proper thermal management. Additionally, consider using a MOSFET with a lower RDS(on) value, like the BUK7Y20-30B,115, which has a typical RDS(on) of 7.5mΩ.
Yes, the BUK7Y20-30B,115 is suitable for high-frequency switching applications due to its low gate charge (Qg) of 13nC and low output capacitance (Coss) of 220pF.