Part Details for BUK7Y12-40E by NXP Semiconductors
Results Overview of BUK7Y12-40E by NXP Semiconductors
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BUK7Y12-40E Information
BUK7Y12-40E by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUK7Y12-40E
BUK7Y12-40E CAD Models
BUK7Y12-40E Part Data Attributes
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BUK7Y12-40E
NXP Semiconductors
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Datasheet
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BUK7Y12-40E
NXP Semiconductors
POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Terminal Finish | TIN |
BUK7Y12-40E Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BUK7Y12-40E is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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The recommended gate drive voltage for the BUK7Y12-40E is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the BUK7Y12-40E is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout to minimize electromagnetic interference (EMI).
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To protect the BUK7Y12-40E from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in your design, such as TVS diodes or ESD protection arrays.