Part Details for BUK755R2-40B by NXP Semiconductors
Results Overview of BUK755R2-40B by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
BUK755R2-40B Information
BUK755R2-40B by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUK755R2-40B
BUK755R2-40B CAD Models
BUK755R2-40B Part Data Attributes
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BUK755R2-40B
NXP Semiconductors
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Datasheet
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BUK755R2-40B
NXP Semiconductors
TRANSISTOR 75 A, 40 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220AB | |
| Package Description | PLASTIC, SC-46, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 494 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 203 W | |
| Pulsed Drain Current-Max (IDM) | 573 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK755R2-40B
This table gives cross-reference parts and alternative options found for BUK755R2-40B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK755R2-40B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK755R2-40B,127 | Nexperia | Check for Price | N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin | BUK755R2-40B vs BUK755R2-40B,127 |
| BUK755R2-40B,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS standard level FET TO-220 3-Pin | BUK755R2-40B vs BUK755R2-40B,127 |
| BUK755R2-40B | Nexperia | Check for Price | Power Field-Effect Transistor | BUK755R2-40B vs BUK755R2-40B |