Part Details for BUK6E2R0-30C,127 by NXP Semiconductors
Results Overview of BUK6E2R0-30C,127 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUK6E2R0-30C,127 Information
BUK6E2R0-30C,127 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUK6E2R0-30C,127
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85966660
|
Verical | Trans MOSFET N-CH 30V 120A Automotive 3-Pin(3+Tab) I2PAK Rail Min Qty: 281 Package Multiple: 1 Date Code: 1101 | Americas - 4728 |
|
$1.3375 | Buy Now |
|
|
Rochester Electronics | Power Field-Effect Transistor, 120A, 30V, 0.0037ohm, N-Channel, MOSFET, TO-262AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 4728 |
|
$0.6635 / $1.0700 | Buy Now |
Part Details for BUK6E2R0-30C,127
BUK6E2R0-30C,127 CAD Models
BUK6E2R0-30C,127 Part Data Attributes
|
|
BUK6E2R0-30C,127
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
BUK6E2R0-30C,127
NXP Semiconductors
N-channel TrenchMOS intermediate level FET TO-262 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-262 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT226 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 120 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 306 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) |