Part Details for BU807 by Fairchild Semiconductor Corporation
Results Overview of BU807 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BU807 Information
BU807 by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BU807
BU807 CAD Models
BU807 Part Data Attributes
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BU807
Fairchild Semiconductor Corporation
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Datasheet
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BU807
Fairchild Semiconductor Corporation
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | BUILT IN BIAS RESISTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 150 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BU807
This table gives cross-reference parts and alternative options found for BU807. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BU807, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BU807 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | BU807 vs BU807 |
BU807 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BU807 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. As a general rule, it's recommended to operate the device within the specified voltage and current limits to ensure reliable operation.
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To ensure the BU807 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V) and that the collector-emitter voltage (VCE) is within the specified range. Additionally, you should also ensure that the device is operated within the recommended current and power dissipation limits.
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The recommended heatsink for the BU807 depends on the specific application and operating conditions. However, as a general rule, a heatsink with a thermal resistance of around 10-20°C/W is recommended to ensure that the device operates within its specified temperature range.
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Yes, the BU807 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). The BU807 is primarily designed for linear amplifier applications, and using it as a switch may result in reduced performance and reliability.
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To protect the BU807 from electrostatic discharge (ESD), you should handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, you should also ensure that the device is properly connected to a ground plane or other ESD protection circuitry in the final application.