Part Details for BTS131E3045ANTMA1 by Infineon Technologies AG
Results Overview of BTS131E3045ANTMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
BTS131E3045ANTMA1 Information
BTS131E3045ANTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BTS131E3045ANTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86095035
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Verical | Trans MOSFET N-CH 50V 25A 3-Pin(2+Tab) TO-220AB SMD T/R RoHS: Not Compliant Min Qty: 45 Package Multiple: 1 Date Code: 1401 | Americas - 8919 |
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$8.4625 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 8919 |
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$5.4200 / $6.7700 | Buy Now |
Part Details for BTS131E3045ANTMA1
BTS131E3045ANTMA1 CAD Models
BTS131E3045ANTMA1 Part Data Attributes
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BTS131E3045ANTMA1
Infineon Technologies AG
Buy Now
Datasheet
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BTS131E3045ANTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220AB, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
BTS131E3045ANTMA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BTS131E3045ANTMA1 in their application note AN191 'Power MOSFETs - Thermal Management'. It includes guidelines for thermal vias, copper thickness, and heat sink design.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and implement thermal monitoring and protection mechanisms. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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The BTS131E3045ANTMA1 is designed to withstand voltage spikes and transients up to 40V for a duration of 100ns. However, it's recommended to use a suitable snubber circuit or TVS diode to protect the device from excessive voltage transients.
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Yes, the BTS131E3045ANTMA1 is suitable for high-frequency switching applications up to 100kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout and component selection are optimized for high-frequency operation.
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The gate resistor value depends on the specific application requirements, such as switching frequency, gate drive voltage, and PCB layout. A general guideline is to use a gate resistor value between 10Ω and 100Ω. However, it's recommended to consult Infineon's application notes and simulation tools to determine the optimal gate resistor value for your specific design.