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Part Details for BSZ900N15NS3GATMA1 by Infineon Technologies AG
Results Overview of BSZ900N15NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSZ900N15NS3GATMA1 Information
BSZ900N15NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ900N15NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y1837
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Newark | Mosfet, N-Ch, 150V, 13A, 150Deg C, 38W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSZ900N15NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 166 |
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$0.5030 / $0.9000 | Buy Now |
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DISTI #
86AK4599
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Newark | Mosfet, N-Ch, 150V, 13A, Tsdson Rohs Compliant: Yes |Infineon BSZ900N15NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4940 | Buy Now |
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DISTI #
BSZ900N15NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 13A 8TSDSON Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
12435 In Stock |
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$0.4677 / $1.2100 | Buy Now |
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DISTI #
50Y1837
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Avnet Americas | Trans MOSFET N-CH 150V 13A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 50Y1837) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 166 Partner Stock |
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$0.6820 / $1.1200 | Buy Now |
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DISTI #
BSZ900N15NS3GATMA1
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Avnet Americas | - Tape and Reel (Alt: BSZ900N15NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3608 / $0.3795 | Buy Now |
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DISTI #
726-BSZ900N15NS3GATM
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Mouser Electronics | MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3 RoHS: Compliant | 11869 |
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$0.4670 / $0.9400 | Buy Now |
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DISTI #
E02:0323_00822449
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Arrow Electronics | Trans MOSFET N-CH 150V 13A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Date Code: 2511 | Europe - 5000 |
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$0.3824 | Buy Now |
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DISTI #
V72:2272_06384545
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Arrow Electronics | Trans MOSFET N-CH 150V 13A 8-Pin TSDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2252 Container: Cut Strips | Americas - 53 |
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$0.4185 / $0.6390 | Buy Now |
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Future Electronics | Single N-Channel 150 V 90 mOhm 5 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 15000Reel |
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$0.3800 | Buy Now |
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Future Electronics | Single N-Channel 150 V 90 mOhm 5 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.3800 | Buy Now |
Part Details for BSZ900N15NS3GATMA1
BSZ900N15NS3GATMA1 CAD Models
BSZ900N15NS3GATMA1 Part Data Attributes
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BSZ900N15NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ900N15NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSZ900N15NS3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSZ900N15NS3GATMA1 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good thermal contact between the MOSFET and heat sink.
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The recommended gate resistor value is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the BSZ900N15NS3GATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the MOSFET is properly driven and the layout is optimized for high-frequency operation.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.