-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSZ16DN25NS3G by Infineon Technologies AG
Results Overview of BSZ16DN25NS3G by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
BSZ16DN25NS3G Information
BSZ16DN25NS3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSZ16DN25NS3G
BSZ16DN25NS3G CAD Models
BSZ16DN25NS3G Part Data Attributes
|
|
BSZ16DN25NS3G
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ16DN25NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N5 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 10.9 A | |
| Drain-source On Resistance-Max | 0.165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62.5 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ16DN25NS3G
This table gives cross-reference parts and alternative options found for BSZ16DN25NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ16DN25NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ16DN25NS3GATMA1 | Infineon Technologies AG | $0.8172 | Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSZ16DN25NS3G vs BSZ16DN25NS3GATMA1 |
| BSC16DN25NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSZ16DN25NS3G vs BSC16DN25NS3G |
BSZ16DN25NS3G Frequently Asked Questions (FAQ)
-
Infineon provides a recommended PCB layout for the BSZ16DN25NS3G in their application note AN2013-03. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
-
To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques such as heat sinks, thermal interfaces, and airflow management to keep the device temperature within the specified range.
-
The BSZ16DN25NS3G has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. Infineon recommends following the ESD handling guidelines outlined in their application note AN2013-01, which includes using ESD-protective packaging, wrist straps, and mats.
-
Yes, the BSZ16DN25NS3G is AEC-Q101 qualified, making it suitable for use in automotive applications. However, it's essential to ensure that the device meets the specific requirements of your application, including temperature range, voltage, and current ratings.
-
Infineon provides recommended soldering and rework conditions for the BSZ16DN25NS3G in their application note AN2013-02. The note outlines the recommended soldering temperature profiles, rework techniques, and handling precautions to prevent damage during the assembly process.