Part Details for BSZ075N08NS5 by Infineon Technologies AG
Results Overview of BSZ075N08NS5 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSZ075N08NS5 Information
BSZ075N08NS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ075N08NS5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 125 |
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$1.1250 / $1.8000 | Buy Now |
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Quest Components | 100 |
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$0.9000 / $2.4000 | Buy Now | |
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Cytech Systems Limited | FET N-Channel Power Id=40A Vds=80V | 1510 |
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RFQ | |
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LCSC | 80V 73A 7.5m10V20A 69W 3.8V 1 N-channel TSDSON-8-EP(3.3x3.3) MOSFETs ROHS | 1469 |
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$0.3712 / $0.7137 | Buy Now |
Part Details for BSZ075N08NS5
BSZ075N08NS5 CAD Models
BSZ075N08NS5 Part Data Attributes
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BSZ075N08NS5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ075N08NS5
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 80V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8FL, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 104 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSZ075N08NS5 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BSZ075N08NS5 in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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The BSZ075N08NS5 requires a gate-source voltage (VGS) of 10-15V for optimal performance. Ensure that the gate driver is capable of providing this voltage, and that the gate resistor is properly sized to prevent oscillations.
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The maximum allowed junction temperature (Tj) for the BSZ075N08NS5 is 150°C. Exceeding this temperature can lead to reduced performance, reliability, and lifespan of the device.
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Infineon recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins of the BSZ075N08NS5 to prevent damage from electrostatic discharge.
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The recommended gate drive voltage for the BSZ075N08NS5 is 10-15V. This ensures that the device is fully enhanced and operating in the saturation region.