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Part Details for BSZ065N06LS5 by Infineon Technologies AG
Results Overview of BSZ065N06LS5 by Infineon Technologies AG
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSZ065N06LS5 Information
BSZ065N06LS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSZ065N06LS5
BSZ065N06LS5 CAD Models
BSZ065N06LS5 Part Data Attributes
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BSZ065N06LS5
Infineon Technologies AG
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Datasheet
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BSZ065N06LS5
Infineon Technologies AG
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSDSON-8 FL, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 38 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Reference Standard | IEC-68-1; IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSZ065N06LS5 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BSZ065N06LS5 in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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To ensure proper biasing during startup, Infineon recommends using a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using an external resistor-capacitor network or an integrated soft-start circuit in the driver IC.
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The maximum allowed voltage slew rate for the BSZ065N06LS5 is not explicitly stated in the datasheet. However, as a general guideline, Infineon recommends limiting the voltage slew rate to 10 V/ns or less to minimize electromagnetic interference (EMI) and ensure reliable operation.
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Yes, the BSZ065N06LS5 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation and minimize electromagnetic interference (EMI).
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To protect the BSZ065N06LS5 from overvoltage and overcurrent conditions, Infineon recommends using external protection circuits such as voltage clamps, current sensors, and overcurrent protection ICs. Additionally, ensure that the device is operated within its specified maximum ratings and that the PCB layout is designed to minimize parasitic inductances and resistances.