-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSZ060NE2LSATMA1 by Infineon Technologies AG
Results Overview of BSZ060NE2LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSZ060NE2LSATMA1 Information
BSZ060NE2LSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ060NE2LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2480782
|
Farnell | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 26602 |
|
$0.1771 / $0.7874 | Buy Now |
|
DISTI #
2480782RL
|
Farnell | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel | 26602 |
|
$0.1771 / $0.3662 | Buy Now |
|
DISTI #
4318967
|
Farnell | MOSFET, N-CH, 25V, 40A, TSDSON RoHS: Compliant Min Qty: 5000 Lead time: 19 Weeks, 1 Days Container: Reel | 0 |
|
$0.1945 / $0.1985 | Buy Now |
|
DISTI #
BSZ060NE2LSATMA1CT-ND
|
DigiKey | MOSFET N-CH 25V 12A/40A TSDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
36569 In Stock |
|
$0.1800 / $0.7300 | Buy Now |
|
DISTI #
BSZ060NE2LSATMA1
|
Avnet Americas | Power MOSFET, N Channel, 25 V, 40 A, 0.005 ohm, TSDSON, Surface Mount - Tape and Reel (Alt: BSZ060NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.1388 / $0.1460 | Buy Now |
|
DISTI #
726-BSZ060NE2LSATMA1
|
Mouser Electronics | MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS RoHS: Compliant | 58257 |
|
$0.1870 / $0.5200 | Buy Now |
|
DISTI #
V36:1790_06384844
|
Arrow Electronics | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2245 | Americas - 25000 |
|
$0.1405 | Buy Now |
|
DISTI #
79007238
|
Verical | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2245 | Americas - 25000 |
|
$0.1405 | Buy Now |
|
DISTI #
69268419
|
Verical | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R Min Qty: 151 Package Multiple: 1 Date Code: 2243 | Americas - 14268 |
|
$0.2100 / $0.6640 | Buy Now |
|
DISTI #
87324283
|
Verical | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R Min Qty: 1227 Package Multiple: 1 Date Code: 2201 | Americas - 5000 |
|
$0.3056 | Buy Now |
Part Details for BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 CAD Models
BSZ060NE2LSATMA1 Part Data Attributes
|
|
BSZ060NE2LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ060NE2LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TSDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 16 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ060NE2LSATMA1
This table gives cross-reference parts and alternative options found for BSZ060NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ060NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APM4220KAC-TRL | American Power Devices Inc | Check for Price | Power Field-Effect Transistor, 13A I(D), 25V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012BA, ROHS COMPLIANT, SOP-8 | BSZ060NE2LSATMA1 vs APM4220KAC-TRL |
BSZ060NE2LSATMA1 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the BSZ060NE2LSATMA1 is a 6-pin SOT-23 package with a 1.8mm x 1.35mm body size. The recommended land pattern is available in the Infineon application note AN2013-01.
-
To ensure proper biasing, the BSZ060NE2LSATMA1 requires a supply voltage (VCC) between 1.71V and 5.5V, and a gate-source voltage (VGS) between -0.5V and VCC + 0.5V. Additionally, a 10nF decoupling capacitor should be placed close to the device to filter out noise.
-
The BSZ060NE2LSATMA1 is rated for operation from -40°C to 150°C (TJ). However, the device's performance may degrade at temperatures above 125°C, and it is recommended to derate the device's power handling accordingly.
-
To protect the BSZ060NE2LSATMA1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
-
The BSZ060NE2LSATMA1 has a maximum continuous drain current (ID) of 2.5A, and a maximum pulsed drain current (IDP) of 5A. However, the device's current rating may be limited by the PCB's thermal design and the device's junction temperature.