Datasheets
BSZ040N06LS5 by:

Power Field-Effect Transistor

Part Details for BSZ040N06LS5 by Infineon Technologies AG

Results Overview of BSZ040N06LS5 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

BSZ040N06LS5 Information

BSZ040N06LS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSZ040N06LS5

Part # Distributor Description Stock Price Buy
NexGen Digital   3498
RFQ
LCSC 60V 40A 4m10V20A 69W 2.3V 1 N-channel TSDSON-8(3.3x3.3) MOSFETs ROHS 3
  • 1 $3.3780
  • 10 $2.8816
  • 30 $2.5875
  • 100 $2.2902
  • 500 $2.1529
  • 1,000 $2.0896
$2.0896 / $3.3780 Buy Now

Part Details for BSZ040N06LS5

BSZ040N06LS5 CAD Models

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BSZ040N06LS5 Part Data Attributes

BSZ040N06LS5 Infineon Technologies AG
Buy Now Datasheet
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BSZ040N06LS5 Infineon Technologies AG Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 117 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

BSZ040N06LS5 Related Parts

BSZ040N06LS5 Frequently Asked Questions (FAQ)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via array under the device are also recommended.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, and to derate the device's power handling according to the temperature derating curve provided in the datasheet.

  • The BSZ040N06LS5 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices if the application requires it.

  • Yes, the BSZ040N06LS5 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, including the rise and fall times, and to ensure that the application's switching frequency is within the device's recommended operating range.

  • The gate resistor value depends on the application's specific requirements, including the switching frequency, gate drive voltage, and PCB layout. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω. Consult the datasheet and application notes for more detailed guidance.

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