Part Details for BSZ040N06LS5 by Infineon Technologies AG
Results Overview of BSZ040N06LS5 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSZ040N06LS5 Information
BSZ040N06LS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ040N06LS5
Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 3498 |
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RFQ | ||
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LCSC | 60V 40A 4m10V20A 69W 2.3V 1 N-channel TSDSON-8(3.3x3.3) MOSFETs ROHS | 3 |
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$2.0896 / $3.3780 | Buy Now |
Part Details for BSZ040N06LS5
BSZ040N06LS5 CAD Models
BSZ040N06LS5 Part Data Attributes
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BSZ040N06LS5
Infineon Technologies AG
Buy Now
Datasheet
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BSZ040N06LS5
Infineon Technologies AG
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 117 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.0056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
BSZ040N06LS5 Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via array under the device are also recommended.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, and to derate the device's power handling according to the temperature derating curve provided in the datasheet.
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The BSZ040N06LS5 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices if the application requires it.
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Yes, the BSZ040N06LS5 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, including the rise and fall times, and to ensure that the application's switching frequency is within the device's recommended operating range.
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The gate resistor value depends on the application's specific requirements, including the switching frequency, gate drive voltage, and PCB layout. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω. Consult the datasheet and application notes for more detailed guidance.