Part Details for BST82T/R by Philips Semiconductors
Results Overview of BST82T/R by Philips Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BST82T/R Information
BST82T/R by Philips Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BST82T/R
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 391 |
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RFQ |
Part Details for BST82T/R
BST82T/R CAD Models
BST82T/R Part Data Attributes
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BST82T/R
Philips Semiconductors
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Datasheet
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BST82T/R
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 0.175 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN |