Datasheets
BST82 by:

175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Part Details for BST82 by NXP Semiconductors

Results Overview of BST82 by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems

BST82 Information

BST82 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BST82

Part # Distributor Description Stock Price Buy
Quest Components 175 MA, 80 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOT-23 1920
  • 1 $0.9130
  • 123 $0.2739
  • 1,461 $0.1826
$0.1826 / $0.9130 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 77
RFQ
Win Source Electronics MOSFET N-CH 100V 190MA SOT-23 168000
  • 420 $0.1383
  • 1,020 $0.1136
  • 1,580 $0.1100
  • 2,175 $0.1064
  • 2,810 $0.1029
  • 3,760 $0.0922
$0.0922 / $0.1383 Buy Now

Part Details for BST82

BST82 CAD Models

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BST82 Part Data Attributes

BST82 NXP Semiconductors
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BST82 NXP Semiconductors 175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer NXP
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 0.175 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BST82

This table gives cross-reference parts and alternative options found for BST82. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BST82, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
933733110235 NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82 vs 933733110235
BST82 Zetex / Diodes Inc Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BST82 vs BST82
BST82TA Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BST82 vs BST82TA
933733110215 NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82 vs 933733110215
BST82T/R NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal BST82 vs BST82T/R
BST82-T NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82 vs BST82-T
933733110235 Nexperia Check for Price Small Signal Field-Effect Transistor BST82 vs 933733110235
BST82 Nexperia Check for Price Small Signal Field-Effect Transistor BST82 vs BST82
Part Number Manufacturer Composite Price Description Compare
BST82,235 NXP Semiconductors Check for Price BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin BST82 vs BST82,235
BST82,215 NXP Semiconductors Check for Price BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin BST82 vs BST82,215
DN2530N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82 vs DN2530N3-G
VN2224N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.54A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN BST82 vs VN2224N3-G
BSS192,115 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin BST82 vs BSS192,115
DN2535N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.12A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82 vs DN2535N3-G
BSS192,135 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin BST82 vs BSS192,135
TN0610N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN BST82 vs TN0610N3-G
TN0104N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.45A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82 vs TN0104N3-G
VN0106N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN BST82 vs VN0106N3-G

BST82 Related Parts

BST82 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).

  • The selection of external components depends on the specific application and operating conditions. NXP provides a component selection guide in the application note AN11555, which includes guidelines for selecting resistors, capacitors, and other components based on the device's operating frequency, output power, and other factors.

  • The maximum operating temperature range for BST82 is -40°C to +125°C, as specified in the datasheet. However, the device's performance and reliability may be affected at extreme temperatures, and additional thermal management may be required in high-temperature applications.

  • To ensure the reliability and longevity of BST82, follow NXP's recommended design and manufacturing guidelines, including proper PCB layout, component selection, and thermal management. Additionally, consider implementing redundancy, error detection and correction, and other fault-tolerant design techniques to mitigate the risk of device failure.

  • BST82 has built-in ESD protection and latch-up prevention measures, including internal diodes and resistors. However, additional external protection measures may be required, such as ESD protection diodes and resistors, to ensure the device's reliability and robustness in harsh environments.

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