Part Details for BST82 by NXP Semiconductors
Results Overview of BST82 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BST82 Information
BST82 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BST82
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | 175 MA, 80 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOT-23 | 1920 |
|
$0.1826 / $0.9130 | Buy Now |
|
Chip-Germany GmbH | RoHS: Not Compliant | 77 |
|
RFQ | |
|
Win Source Electronics | MOSFET N-CH 100V 190MA SOT-23 | 168000 |
|
$0.0922 / $0.1383 | Buy Now |
Part Details for BST82
BST82 CAD Models
BST82 Part Data Attributes
|
BST82
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
BST82
NXP Semiconductors
175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Samacsys Manufacturer | NXP | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 0.175 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BST82
This table gives cross-reference parts and alternative options found for BST82. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BST82, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
933733110235 | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82 vs 933733110235 |
BST82 | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BST82 vs BST82 |
BST82TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BST82 vs BST82TA |
933733110215 | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82 vs 933733110215 |
BST82T/R | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal | BST82 vs BST82T/R |
BST82-T | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82 vs BST82-T |
933733110235 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BST82 vs 933733110235 |
BST82 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BST82 vs BST82 |
BST82 Frequently Asked Questions (FAQ)
-
NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
-
The selection of external components depends on the specific application and operating conditions. NXP provides a component selection guide in the application note AN11555, which includes guidelines for selecting resistors, capacitors, and other components based on the device's operating frequency, output power, and other factors.
-
The maximum operating temperature range for BST82 is -40°C to +125°C, as specified in the datasheet. However, the device's performance and reliability may be affected at extreme temperatures, and additional thermal management may be required in high-temperature applications.
-
To ensure the reliability and longevity of BST82, follow NXP's recommended design and manufacturing guidelines, including proper PCB layout, component selection, and thermal management. Additionally, consider implementing redundancy, error detection and correction, and other fault-tolerant design techniques to mitigate the risk of device failure.
-
BST82 has built-in ESD protection and latch-up prevention measures, including internal diodes and resistors. However, additional external protection measures may be required, such as ESD protection diodes and resistors, to ensure the device's reliability and robustness in harsh environments.