Part Details for BST82,215 by NXP Semiconductors
Results Overview of BST82,215 by NXP Semiconductors
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BST82,215 Information
BST82,215 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BST82,215
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-BST82,215
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 14316 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 54159 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 2189 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Not Compliant | 5237 |
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RFQ | |
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Vyrian | Transistors | 104482 |
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RFQ |
Part Details for BST82,215
BST82,215 CAD Models
BST82,215 Part Data Attributes
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BST82,215
NXP Semiconductors
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Datasheet
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BST82,215
NXP Semiconductors
BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-236 | |
Package Description | SOT-23, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 0.175 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BST82,215
This table gives cross-reference parts and alternative options found for BST82,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BST82,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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933733110235 | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82,215 vs 933733110235 |
BST82 | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BST82,215 vs BST82 |
BST82 | NXP Semiconductors | Check for Price | 175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | BST82,215 vs BST82 |
BST82TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BST82,215 vs BST82TA |
933733110215 | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82,215 vs 933733110215 |
BST82T/R | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal | BST82,215 vs BST82T/R |
BST82-T | NXP Semiconductors | Check for Price | TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BST82,215 vs BST82-T |
933733110235 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BST82,215 vs 933733110235 |
BST82 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BST82,215 vs BST82 |
BST82,215 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
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Mount the device on a heat sink with a thermal resistance of 1°C/W or lower. Ensure good airflow and avoid blocking the airflow around the device.
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The maximum allowed voltage drop is 0.5V. Exceeding this may cause the device to malfunction or reduce its lifespan.
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The device is rated for operation up to 150°C. However, derating the output current is recommended for temperatures above 125°C to ensure reliability.
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Use a voltage clamp or a zener diode to protect against overvoltage. Implement overcurrent protection using a fuse or a current-sensing resistor with a shutdown circuit.