Datasheets
BST82,215 by:

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

Part Details for BST82,215 by NXP Semiconductors

Results Overview of BST82,215 by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems

BST82,215 Information

BST82,215 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BST82,215

Part # Distributor Description Stock Price Buy
DISTI # SMC-BST82,215
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 14316
RFQ
Chip 1 Exchange INSTOCK 54159
RFQ
Chip 1 Exchange INSTOCK 2189
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 5237
RFQ
Vyrian Transistors 104482
RFQ

Part Details for BST82,215

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BST82,215 Part Data Attributes

BST82,215 NXP Semiconductors
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BST82,215 NXP Semiconductors BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 0.175 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BST82,215

This table gives cross-reference parts and alternative options found for BST82,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BST82,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
933733110235 NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82,215 vs 933733110235
BST82 Zetex / Diodes Inc Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BST82,215 vs BST82
BST82 NXP Semiconductors Check for Price 175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET BST82,215 vs BST82
BST82TA Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BST82,215 vs BST82TA
933733110215 NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82,215 vs 933733110215
BST82T/R NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN, FET General Purpose Small Signal BST82,215 vs BST82T/R
BST82-T NXP Semiconductors Check for Price TRANSISTOR 175 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BST82,215 vs BST82-T
933733110235 Nexperia Check for Price Small Signal Field-Effect Transistor BST82,215 vs 933733110235
BST82 Nexperia Check for Price Small Signal Field-Effect Transistor BST82,215 vs BST82
Part Number Manufacturer Composite Price Description Compare
BST82,235 NXP Semiconductors Check for Price BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin BST82,215 vs BST82,235
DN2530N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.175A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82,215 vs DN2530N3-G
VN2224N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.54A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN BST82,215 vs VN2224N3-G
BSS192,115 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin BST82,215 vs BSS192,115
DN2535N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.12A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82,215 vs DN2535N3-G
BSS192,135 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin BST82,215 vs BSS192,135
TN0610N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN BST82,215 vs TN0610N3-G
TN0104N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.45A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 BST82,215 vs TN0104N3-G
VN0106N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN BST82,215 vs VN0106N3-G
VP2110K1-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.12A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 BST82,215 vs VP2110K1-G

BST82,215 Related Parts

BST82,215 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.

  • Mount the device on a heat sink with a thermal resistance of 1°C/W or lower. Ensure good airflow and avoid blocking the airflow around the device.

  • The maximum allowed voltage drop is 0.5V. Exceeding this may cause the device to malfunction or reduce its lifespan.

  • The device is rated for operation up to 150°C. However, derating the output current is recommended for temperatures above 125°C to ensure reliability.

  • Use a voltage clamp or a zener diode to protect against overvoltage. Implement overcurrent protection using a fuse or a current-sensing resistor with a shutdown circuit.

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