Datasheets
BST52 by:

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 80V; IC (A): 0.5A; HFE Min: 2000; VCE (V): 10V; IC (mA): 500mA; IC (mA)1: 500mA; IB (mA): 0.5mA; FT Min (MHz): 200+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89

Part Details for BST52 by Galaxy Microelectronics

Results Overview of BST52 by Galaxy Microelectronics

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BST52 Information

BST52 by Galaxy Microelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BST52

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BST52 Part Data Attributes

BST52 Galaxy Microelectronics
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BST52 Galaxy Microelectronics General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 80V; IC (A): 0.5A; HFE Min: 2000; VCE (V): 10V; IC (mA): 500mA; IC (mA)1: 500mA; IB (mA): 0.5mA; FT Min (MHz): 200+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-89
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 2000
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form FLAT
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz

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