Part Details for BSS84PH6327 by Infineon Technologies AG
Results Overview of BSS84PH6327 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
BSS84PH6327 Information
BSS84PH6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS84PH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 15 | 1990 |
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$0.0675 / $0.3375 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4090 |
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$0.1140 / $0.5700 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2136 |
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$0.1800 / $0.9000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1848 |
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$0.3822 / $1.0920 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1592 |
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$0.0900 / $0.4500 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 784 |
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$0.2400 / $0.8000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 500 |
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$0.0960 / $0.1800 | Buy Now |
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ComSIT USA | AVAILABLE EU | 1107 |
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RFQ | |
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ComSIT USA | SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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Chip 1 Exchange | INSTOCK | 387000 |
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RFQ |
Part Details for BSS84PH6327
BSS84PH6327 CAD Models
BSS84PH6327 Part Data Attributes
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BSS84PH6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSS84PH6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
BSS84PH6327 Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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The BSS84PH6327 requires a bias voltage of 5V to 28V on the gate pin, and a source pin connected to a low-impedance power supply. Ensure the bias voltage is stable and noise-free for optimal performance.
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The maximum allowed power dissipation for the BSS84PH6327 is 2.5W. Exceeding this limit can cause the device to overheat and fail.
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Handle the device by the body, not the pins, and use an ESD wrist strap or mat to prevent static buildup. Ensure the PCB has ESD protection components, such as TVS diodes, to protect the device from voltage surges.
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The recommended storage temperature range for the BSS84PH6327 is -40°C to 125°C. Storing the device outside this range can affect its reliability and performance.