Part Details for BSS606NH6327 by Infineon Technologies AG
Results Overview of BSS606NH6327 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
BSS606NH6327 Information
BSS606NH6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS606NH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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LCSC | 60V 3.2A 60m10V3.2A 1W 2.3V 1 N-channel SOT-89-3 MOSFETs ROHS | 5 |
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$0.1409 / $0.2980 | Buy Now |
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Vyrian | Transistors | 7272 |
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RFQ | |
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Win Source Electronics | BSS606 - 250V-600V SMALL SIGNAL | 50000 |
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$0.3132 / $0.4045 | Buy Now |
Part Details for BSS606NH6327
BSS606NH6327 CAD Models
BSS606NH6327 Part Data Attributes
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BSS606NH6327
Infineon Technologies AG
Buy Now
Datasheet
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BSS606NH6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15.3 pF | |
| JESD-30 Code | R-PSSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
BSS606NH6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BSS606NH6327 in their application note AN2013-01. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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The BSS606NH6327 requires a specific biasing scheme to operate correctly. Infineon recommends using a voltage regulator to provide a stable 5V supply to the device, and ensuring that the input voltage is within the recommended range of 4.5V to 5.5V.
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The maximum allowed power dissipation for the BSS606NH6327 is dependent on the ambient temperature and the thermal resistance of the PCB. According to the datasheet, the maximum power dissipation is 1.4W at an ambient temperature of 25°C, and decreases as the temperature increases.
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Infineon recommends taking standard ESD precautions when handling the BSS606NH6327, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, the device has built-in ESD protection, but it is still important to follow proper handling procedures to prevent damage.
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The BSS606NH6327 is designed to operate at frequencies up to 100 kHz, but the recommended operating frequency range is typically between 10 kHz to 50 kHz for optimal performance and efficiency.