Part Details for BSS214NWH6327 by Infineon Technologies AG
Results Overview of BSS214NWH6327 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
BSS214NWH6327 Information
BSS214NWH6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS214NWH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 10400 |
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RFQ | |
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Cytech Systems Limited | BSS214 - 250V-600V SMALL SIGNAL | 1000 |
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LCSC | 20V 1.5A 140m4.5V1.5A 500mW 1.2V 1 N-channel SOT-323 MOSFETs ROHS | 410 |
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$0.0565 / $0.0594 | Buy Now |
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Wuhan P&S | 20V,140m��,1.5A,N-Ch Small-Signal MOSFET Min Qty: 1 | 8000 |
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$0.0700 / $0.0900 | Buy Now |
Part Details for BSS214NWH6327
BSS214NWH6327 CAD Models
BSS214NWH6327 Part Data Attributes
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BSS214NWH6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSS214NWH6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS214NWH6327
This table gives cross-reference parts and alternative options found for BSS214NWH6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS214NWH6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDN335N | onsemi | $0.2264 | N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ, SOT-23-3, 3000-REEL | BSS214NWH6327 vs FDN335N |
| BSS214NWL6327HTSA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS214NWH6327 vs BSS214NWL6327HTSA1 |
| FDN335NS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | BSS214NWH6327 vs FDN335NS62Z |
| BSS214NWL6327HTMA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS214NWH6327 vs BSS214NWL6327HTMA1 |
| BSD214SNL6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | BSS214NWH6327 vs BSD214SNL6327 |
| NDS335NS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | BSS214NWH6327 vs NDS335NS62Z |
| NDS335ND87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | BSS214NWH6327 vs NDS335ND87Z |
| NDS335N/D87Z | Texas Instruments | Check for Price | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS214NWH6327 vs NDS335N/D87Z |
| FDN335ND87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | BSS214NWH6327 vs FDN335ND87Z |
| FDN335N_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | BSS214NWH6327 vs FDN335N_NL |