Part Details for BSS138WL6327HTSA1 by Infineon Technologies AG
Results Overview of BSS138WL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
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BSS138WL6327HTSA1 Information
BSS138WL6327HTSA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSS138WL6327HTSA1
BSS138WL6327HTSA1 CAD Models
BSS138WL6327HTSA1 Part Data Attributes
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BSS138WL6327HTSA1
Infineon Technologies AG
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Datasheet
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BSS138WL6327HTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.28 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.2 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS138WL6327HTSA1
This table gives cross-reference parts and alternative options found for BSS138WL6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138WL6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RE1L002SNTL | ROHM Semiconductor | $0.0780 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3F, 3 PIN | BSS138WL6327HTSA1 vs RE1L002SNTL |
| 2N7002KW | onsemi | $0.1289 | N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω, SC-70-3 / SOT-323-3, 3000-REEL | BSS138WL6327HTSA1 vs 2N7002KW |
| BSS138WL6327HTMA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327HTSA1 vs BSS138WL6327HTMA1 |
| 2N7002KW_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327HTSA1 vs 2N7002KW_R1_00001 |
| RSE002N06TL | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN | BSS138WL6327HTSA1 vs RSE002N06TL |
| 2N7002KWT/R13 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138WL6327HTSA1 vs 2N7002KWT/R13 |
| PJC7472B_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327HTSA1 vs PJC7472B_R1_00001 |
| 2N7002KTB_R1_10001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138WL6327HTSA1 vs 2N7002KTB_R1_10001 |
| 2N7002KTB_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327HTSA1 vs 2N7002KTB_R1_00001 |
| 934068055235 | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | BSS138WL6327HTSA1 vs 934068055235 |
Resources and Additional Insights for BSS138WL6327HTSA1
Reference Designs related to BSS138WL6327HTSA1
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