Part Details for BSS138WL6327 by Infineon Technologies AG
Results Overview of BSS138WL6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138WL6327 Information
BSS138WL6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138WL6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 280MA SOT-323 | 910190 |
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$0.0437 / $0.0563 | Buy Now |
Part Details for BSS138WL6327
BSS138WL6327 CAD Models
BSS138WL6327 Part Data Attributes
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BSS138WL6327
Infineon Technologies AG
Buy Now
Datasheet
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BSS138WL6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-323, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.28 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.2 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS138WL6327
This table gives cross-reference parts and alternative options found for BSS138WL6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138WL6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BSS138W | onsemi | $0.1160 | N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 , 210mA, 3.5Ω, SC-70-3 / SOT-323-3, 3000-REEL | BSS138WL6327 vs BSS138W |
| BSS138WL6433 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327 vs BSS138WL6433 |
| BSS138W | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138WL6327 vs BSS138W |
| BSS138W_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327 vs BSS138W_R1_00001 |
| BSS138WT/R7 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138WL6327 vs BSS138WT/R7 |
| BSS138W_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WL6327 vs BSS138W_R2_00001 |
| BSS138W | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.21A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN | BSS138WL6327 vs BSS138W |
| BSS138W | WEITRON INTERNATIONAL CO., LTD. | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-70, 3 PIN | BSS138WL6327 vs BSS138W |
Resources and Additional Insights for BSS138WL6327
Reference Designs related to BSS138WL6327
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15W Qi transmitter for charging smartphones
The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.
BSS138WL6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The gate resistor value depends on the specific application and switching frequency. As a general guideline, Infineon recommends a gate resistor value between 10 Ω and 100 Ω. A higher value can reduce EMI, but may also increase switching losses. A lower value can reduce switching losses, but may also increase EMI.
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The maximum allowed junction temperature for the BSS138WL6327 is 150°C. Exceeding this temperature can reduce the device's lifetime and reliability.
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Yes, the BSS138WL6327 is qualified according to AEC-Q101, which makes it suitable for automotive and high-reliability applications. However, it's essential to follow Infineon's guidelines for design, manufacturing, and testing to ensure the device meets the required reliability and quality standards.
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The thermal pad of the BSS138WL6327 should be connected to a solid copper area on the PCB to ensure good thermal conduction. Infineon recommends using a thermal interface material (TIM) and a soldering process that ensures a reliable connection between the thermal pad and the PCB.