Datasheets
BSS138W by:

Small Signal Field-Effect Transistor, 0.21A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN

Part Details for BSS138W by Fairchild Semiconductor Corporation

Results Overview of BSS138W by Fairchild Semiconductor Corporation

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BSS138W Information

BSS138W by Fairchild Semiconductor Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS138W

Part # Distributor Description Stock Price Buy
Bristol Electronics   2085
RFQ
Quest Components 210 MA, 50 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET 80
  • 1 $2.9200
  • 12 $1.8250
  • 42 $1.6060
$1.6060 / $2.9200 Buy Now
Win Source Electronics MOSFET N-CH 50V 0.21A SOT323 / Trans MOSFET N-CH 50V 0.21A 3-Pin SC-70 T/R 97555
  • 1,280 $0.0453
  • 2,725 $0.0424
  • 4,230 $0.0410
  • 6,080 $0.0380
  • 7,890 $0.0367
  • 9,870 $0.0351
$0.0351 / $0.0453 Buy Now

Part Details for BSS138W

BSS138W CAD Models

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BSS138W Part Data Attributes

BSS138W Fairchild Semiconductor Corporation
Buy Now Datasheet
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BSS138W Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 0.21A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SC-70
Package Description SOT-323, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, SC70, EIAJ SC-70, 1.25MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature ULTRA-LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.21 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.5 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.34 W
Power Dissipation-Max (Abs) 0.34 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS138W

This table gives cross-reference parts and alternative options found for BSS138W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSS138W onsemi $0.1054 N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 , 210mA, 3.5Ω, SC-70-3 / SOT-323-3, 3000-REEL BSS138W vs BSS138W
BSS138WGL6433 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 BSS138W vs BSS138WGL6433
BSS138W_R1_00001 PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS138W vs BSS138W_R1_00001
BSS138W WEITRON INTERNATIONAL CO., LTD. Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-70, 3 PIN BSS138W vs BSS138W
BSS138W_R2_00001 PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS138W vs BSS138W_R2_00001
BSS138WL6433 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS138W vs BSS138WL6433
BSS138WL6327 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS138W vs BSS138WL6327
BSS138WT/R13 PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 BSS138W vs BSS138WT/R13

Resources and Additional Insights for BSS138W

Reference Designs related to BSS138W

  • 15W Qi transmitter for charging smartphones
    The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.

BSS138W Related Parts

BSS138W Frequently Asked Questions (FAQ)

  • The BSS138W can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V, and the drain-source voltage (Vds) should be between 1V to 20V. Additionally, the gate current (Ig) should be limited to 10mA or less.

  • The maximum continuous drain current (Id) rating for the BSS138W is 1.4A, and the pulsed drain current rating is 2.8A.

  • To protect the BSS138W from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-safe. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.

  • For optimal thermal performance, use a PCB with a thermal pad and ensure good thermal conductivity. Keep the component placement and routing compact to minimize thermal resistance. A heat sink or thermal interface material can also be used to improve thermal dissipation.

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