Part Details for BSS138W by Diodes Incorporated
Results Overview of BSS138W by Diodes Incorporated
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
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BSS138W Information
BSS138W by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138W
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 210 MA, 50 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 4 |
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$0.1680 | Buy Now |
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NexGen Digital | 100 |
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RFQ | ||
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Vyrian | Transistors | 115789 |
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RFQ |
Part Details for BSS138W
BSS138W CAD Models
BSS138W Part Data Attributes
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BSS138W
Diodes Incorporated
Buy Now
Datasheet
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BSS138W
Diodes Incorporated
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-323, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Resources and Additional Insights for BSS138W
Reference Designs related to BSS138W
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15W Qi transmitter for charging smartphones
The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.
BSS138W Frequently Asked Questions (FAQ)
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The BSS138W can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2.5V and 10V, and the drain-source voltage (Vds) should be between 0V and 50V. Additionally, the gate current (Ig) should be limited to 10mA or less.
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The maximum continuous drain current (Id) for the BSS138W is 1.2A, but it can handle up to 3.6A for short pulses (less than 10ms).
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To protect the BSS138W from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
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For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the PCB. Keep the drain and source pins as close as possible to the thermal pad, and use a sufficient number of vias to dissipate heat. Additionally, keep the PCB layout compact and avoid using long traces or wires to minimize parasitic inductance and capacitance.