Datasheets
BSS138W-G by:

Small Signal Field-Effect Transistor,

Part Details for BSS138W-G by Comchip Technology Corporation Ltd

Results Overview of BSS138W-G by Comchip Technology Corporation Ltd

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BSS138W-G Information

BSS138W-G by Comchip Technology Corporation Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS138W-G

Part # Distributor Description Stock Price Buy
DISTI # 641-BSS138W-GTR-ND
DigiKey MOSFET N-CH 50V 0.22A SOT23-3 Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.0630
  • 6,000 $0.0567
  • 9,000 $0.0535
  • 15,000 $0.0499
  • 21,000 $0.0477
  • 30,000 $0.0456
  • 75,000 $0.0411
  • 150,000 $0.0382
$0.0382 / $0.0630 Buy Now
DISTI # 750-BSS138W-G
Mouser Electronics MOSFETs 50V 0.2A SOT-323 RoHS: Compliant 0
  • 1 $0.3300
  • 10 $0.2430
  • 100 $0.1380
  • 1,000 $0.0700
  • 3,000 $0.0600
  • 9,000 $0.0480
  • 24,000 $0.0450
  • 45,000 $0.0400
  • 99,000 $0.0380
$0.0380 / $0.3300 Order Now
NAC Small Signal Field-Effect Transistor RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 0
  • 1 $0.1000
  • 1,500 $0.0500
  • 3,000 $0.0430
  • 15,000 $0.0410
$0.0410 / $0.1000 Buy Now

Part Details for BSS138W-G

BSS138W-G CAD Models

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BSS138W-G Part Data Attributes

BSS138W-G Comchip Technology Corporation Ltd
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BSS138W-G Comchip Technology Corporation Ltd Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Package Description SOT-323, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Comchip Technology
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Resources and Additional Insights for BSS138W-G

Reference Designs related to BSS138W-G

  • 15W Qi transmitter for charging smartphones
    The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.

BSS138W-G Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the BSS138W-G is a standard SOT-23 package with a minimum pad size of 0.8mm x 0.8mm and a maximum pad size of 1.2mm x 1.2mm, with a thermal pad size of 2.5mm x 2.5mm.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1kΩ) and a capacitor (e.g., 100nF) to ground. This helps to reduce noise and oscillations. Additionally, ensure the drain-source voltage is within the recommended range (up to 50V) and the gate-source voltage is within the recommended range (up to ±20V).

  • The maximum power dissipation of the BSS138W-G is 1.3W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design. It's essential to perform thermal analysis to ensure the device operates within its thermal limits.

  • Yes, the BSS138W-G can be used as a switch in high-frequency applications up to 100MHz. However, it's essential to consider the device's parasitic capacitances, inductances, and resistances, as well as the PCB layout and design, to minimize signal degradation and ensure reliable operation.

  • To protect the BSS138W-G from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, near the device. Additionally, follow proper soldering and assembly procedures to minimize the risk of ESD damage.

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