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Part Details for BSS138P by Nexperia
Results Overview of BSS138P by Nexperia
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138P Information
BSS138P by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138P
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 29766 |
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RFQ | ||
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Bristol Electronics | Min Qty: 52 | 6095 |
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$0.0195 / $0.0975 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 23812 |
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$0.0618 / $0.3530 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 2372 |
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$0.3206 / $0.9160 | Buy Now |
Part Details for BSS138P
BSS138P CAD Models
BSS138P Part Data Attributes
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BSS138P
Nexperia
Buy Now
Datasheet
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Compare Parts:
BSS138P
Nexperia
Small Signal Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.36 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSS138P Frequently Asked Questions (FAQ)
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The BSS138P can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2.5V to 10V, and the drain-source voltage (Vds) should be between 1.5V to 50V. Additionally, the gate current (Ig) should be limited to 10mA or less.
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The maximum continuous drain current (Id) for the BSS138P is 1.4A, and the maximum pulsed drain current is 4.2A.
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To protect the BSS138P from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-protected. Additionally, use ESD-protected packaging and storage materials.
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Yes, the BSS138P is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.