Part Details for BSS138NL6327HTSA1 by Infineon Technologies AG
Results Overview of BSS138NL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSS138NL6327HTSA1 Information
BSS138NL6327HTSA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138NL6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000074207
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EBV Elektronik | SIPMOS Small Signal MOSFET Transistor NChannel 60V 023A 3Pin PGSOT23 TR (Alt: SP000074207) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 298 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 230MA SOT-23 | 4450 |
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$0.0125 / $0.0187 | Buy Now |
Part Details for BSS138NL6327HTSA1
BSS138NL6327HTSA1 CAD Models
BSS138NL6327HTSA1 Part Data Attributes
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BSS138NL6327HTSA1
Infineon Technologies AG
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Datasheet
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BSS138NL6327HTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.23 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSS138NL6327HTSA1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the BSS138NL6327HTSA1 is a 3-pin SOT23 package with a pitch of 0.95 mm and a pad size of 1.3 mm x 1.3 mm.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This ensures the MOSFET is fully enhanced or depleted.
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The maximum allowed power dissipation for the BSS138NL6327HTSA1 is 1.4 W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design.
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Yes, the BSS138NL6327HTSA1 can be used as a switch in high-frequency applications up to 100 MHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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To protect the BSS138NL6327HTSA1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.