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Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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BSS138NH6327XTSA2 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
87X8600
|
Newark | Mosfet, N-Ch, 60V, 0.23A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:230Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSS138NH6327XTSA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1094219 |
|
$0.0430 / $0.0470 | Buy Now |
DISTI #
87AK9769
|
Newark | Mosfet, N-Ch, 60V, 0.23A, Sot-23 Rohs Compliant: Yes |Infineon BSS138NH6327XTSA2 RoHS: Compliant Min Qty: 18000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0390 / $0.0430 | Buy Now |
DISTI #
BSS138NH6327XTSA2CT-ND
|
DigiKey | MOSFET N-CH 60V 230MA SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
178256 In Stock |
|
$0.0348 / $0.2200 | Buy Now |
DISTI #
BSS138NH6327XTSA2
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Avnet Americas | Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138NH6327XTSA2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 1 Days Container: Reel | 36000 |
|
$0.0259 / $0.0265 | Buy Now |
DISTI #
87X8600
|
Avnet Americas | - Bulk (Alt: 87X8600) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks, 4 Days Container: Bulk | 152150 Partner Stock |
|
$0.0680 / $0.1870 | Buy Now |
DISTI #
726-BSS138NH6327XTSA
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Mouser Electronics | MOSFETs N-Ch 60V 230mA SOT-23-3 RoHS: Compliant | 110006 |
|
$0.0360 / $0.2200 | Buy Now |
DISTI #
E02:0323_04241256
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Arrow Electronics | Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2512 | Europe - 813000 |
|
$0.0324 / $0.0374 | Buy Now |
DISTI #
V36:1790_06391502
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2512 | Americas - 21000 |
|
$0.0319 / $0.0369 | Buy Now |
DISTI #
V72:2272_06391502
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2337 Container: Cut Strips | Americas - 8925 |
|
$0.0373 / $0.2037 | Buy Now |
|
Future Electronics | Single N-Channel 60 V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 18000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.0299 / $0.0322 | Buy Now |
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BSS138NH6327XTSA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSS138NH6327XTSA2
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Factory Lead Time | 28 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.23 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.8 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.36 W | |
Power Dissipation-Max (Abs) | 0.36 W | |
Reference Standard | AEC-Q101; IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
The recommended PCB footprint for the BSS138NH6327XTSA2 is a 3-pin SOT23 package with a pitch of 0.95 mm and a pad size of 1.3 mm x 1.3 mm.
To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
The maximum allowed power dissipation for the BSS138NH6327XTSA2 is 1.4 W at an ambient temperature of 25°C, and it decreases with increasing temperature.
Yes, the BSS138NH6327XTSA2 can be used as a switch in high-frequency applications up to 1 GHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
To protect the BSS138NH6327XTSA2 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.