Part Details for BSS138NE6433 by Infineon Technologies AG
Results Overview of BSS138NE6433 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138NE6433 Information
BSS138NE6433 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138NE6433
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1111 |
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RFQ |
Part Details for BSS138NE6433
BSS138NE6433 CAD Models
BSS138NE6433 Part Data Attributes
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BSS138NE6433
Infineon Technologies AG
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Datasheet
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BSS138NE6433
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.23 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-STD-883 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS138NE6433
This table gives cross-reference parts and alternative options found for BSS138NE6433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138NE6433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS138LT3G | onsemi | $0.0582 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BSS138NE6433 vs BSS138LT3G |
| BSS138LT1G | onsemi | $0.0968 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS138NE6433 vs BSS138LT1G |
| BSS138T/R13 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138NE6433 vs BSS138T/R13 |
| BSS138 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | BSS138NE6433 vs BSS138 |
| BSS138TC | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138NE6433 vs BSS138TC |
| BSS138-F085 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω, SOT-23 3L, 3000-REEL, Automotive Qualified | BSS138NE6433 vs BSS138-F085 |
| BSS138LT7G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL | BSS138NE6433 vs BSS138LT7G |
| BSS138 | Texas Instruments | Check for Price | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS138NE6433 vs BSS138 |
| RK7002BT116 | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST3, 3 PIN | BSS138NE6433 vs RK7002BT116 |
| BSS138 | National Semiconductor Corporation | Check for Price | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS138NE6433 vs BSS138 |