Part Details for BSS138N by Infineon Technologies AG
Results Overview of BSS138N by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSS138N Information
BSS138N by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138N
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-BSS138N
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 9426 |
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RFQ | |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 7864 |
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$0.0500 / $0.0800 | Buy Now |
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Win Source Electronics | SIPMOS Small-Signal-Transistor | 182000 |
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$0.0612 / $0.0785 | Buy Now |
Part Details for BSS138N
BSS138N CAD Models
BSS138N Part Data Attributes
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BSS138N
Infineon Technologies AG
Buy Now
Datasheet
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BSS138N
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.23 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.8 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.36 W | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101; IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
BSS138N Frequently Asked Questions (FAQ)
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The BSS138N can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2.5V to 10V, and the drain-source voltage (Vds) should be between 1.5V to 50V. Additionally, the gate current (Ig) should be limited to 10mA or less.
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The maximum continuous drain current (Id) for the BSS138N is 1.4A, and the maximum pulsed drain current is 4.2A.
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To protect the BSS138N from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-safe. Additionally, use ESD protection devices such as TVS diodes or ESD arrays in the circuit design.
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For optimal thermal performance, use a PCB with a thermal pad and a heat sink if necessary. Ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize thermal gradients.