Datasheets
BSS138N by:

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS138N by Infineon Technologies AG

Results Overview of BSS138N by Infineon Technologies AG

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BSS138N Information

BSS138N by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS138N

Part # Distributor Description Stock Price Buy
DISTI # SMC-BSS138N
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 9426
RFQ
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 7864
  • 100 $0.0800
  • 500 $0.0600
  • 1,000 $0.0500
$0.0500 / $0.0800 Buy Now
Win Source Electronics SIPMOS Small-Signal-Transistor 182000
  • 740 $0.0785
  • 1,590 $0.0728
  • 2,460 $0.0705
  • 3,510 $0.0658
  • 4,550 $0.0635
  • 5,665 $0.0612
$0.0612 / $0.0785 Buy Now

Part Details for BSS138N

BSS138N CAD Models

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BSS138N Part Data Attributes

BSS138N Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSS138N Infineon Technologies AG Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.23 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.8 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-61249-2-21
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

BSS138N Related Parts

BSS138N Frequently Asked Questions (FAQ)

  • The BSS138N can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2.5V to 10V, and the drain-source voltage (Vds) should be between 1.5V to 50V. Additionally, the gate current (Ig) should be limited to 10mA or less.

  • The maximum continuous drain current (Id) for the BSS138N is 1.4A, and the maximum pulsed drain current is 4.2A.

  • To protect the BSS138N from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-safe. Additionally, use ESD protection devices such as TVS diodes or ESD arrays in the circuit design.

  • For optimal thermal performance, use a PCB with a thermal pad and a heat sink if necessary. Ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize thermal gradients.

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