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Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138LT7G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2812
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Newark | Nfet Sot23 50V 200Ma 3.5O/Reel |Onsemi BSS138LT7G RoHS: Not Compliant Min Qty: 7000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5 RoHS: Compliant Status: Obsolete Min Qty: 1 | 37652 |
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$0.0320 / $0.0516 | Buy Now |
DISTI #
BSS138LT7G
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Avnet Silica | Trans MOSFET NCH 50V 02A 3Pin SOT23 TR (Alt: BSS138LT7G) RoHS: Compliant Min Qty: 21000 Package Multiple: 3500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
BSS138LT7G
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EBV Elektronik | Trans MOSFET NCH 50V 02A 3Pin SOT23 TR (Alt: BSS138LT7G) RoHS: Compliant Min Qty: 3500 Package Multiple: 3500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 18953 |
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RFQ |
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BSS138LT7G
onsemi
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Datasheet
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BSS138LT7G
onsemi
Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Date Of Intro | 2019-03-14 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS138LT7G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138LT7G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
LBSS138LT1 | LRC Leshan Radio Co Ltd | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | BSS138LT7G vs LBSS138LT1 |
BSS138LT3G | onsemi | $0.0565 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BSS138LT7G vs BSS138LT3G |
BSS138/S62Z | Texas Instruments | Check for Price | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS138LT7G vs BSS138/S62Z |
BSS138TR | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | BSS138LT7G vs BSS138TR |
BSS138 | Vishay Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, PLASTIC PACKAGE-3 | BSS138LT7G vs BSS138 |
BSS138 | National Semiconductor Corporation | Check for Price | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS138LT7G vs BSS138 |
The maximum operating temperature range for the BSS138LT7G is -40°C to 150°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is between 1.5V and 5V.
The maximum current rating for the BSS138LT7G is 1.4A.
To protect the BSS138LT7G from ESD, handle the device by the body or use an anti-static wrist strap, and store the device in an anti-static bag or container.
The recommended PCB layout for the BSS138LT7G includes a ground plane, a decoupling capacitor, and a gate resistor. Keep the layout as compact as possible to minimize parasitic inductance.