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Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138LT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83H6430
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Newark | N Channel Mosfet, 50V, 200Ma Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi BSS138LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 204784 |
|
$0.0500 / $0.2030 | Buy Now |
DISTI #
58M4068
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Newark | Mosfet, N-Ch, 50 V, 0.2 A, Sot-23-3, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi BSS138LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 198600 |
|
$0.0680 / $0.2210 | Buy Now |
DISTI #
94W7569
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Newark | Mosfet Transistor, N Channel, 200 Ma, 50 V, 3.5 Ohm, 5 V, 1.5 V Rohs Compliant: Yes |Onsemi BSS138LT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0630 / $0.0670 | Buy Now |
DISTI #
BSS138LT1GOSCT-ND
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DigiKey | MOSFET N-CH 50V 200MA SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
34360 In Stock |
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$0.0361 / $0.2900 | Buy Now |
DISTI #
BSS138LT1G
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Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138LT1G) RoHS: Compliant Min Qty: 16667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 115900 Partner Stock |
|
$0.0353 / $0.0366 | Buy Now |
DISTI #
83H6430
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 83H6430) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 6189 Partner Stock |
|
$0.0730 / $0.2110 | Buy Now |
DISTI #
58M4068
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 58M4068) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 5 Partner Stock |
|
$0.0850 / $0.2230 | Buy Now |
DISTI #
BSS138LT1G
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
BSS138LT1G
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
BSS138LT1G
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 200 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.0361 / $0.0385 | Buy Now |
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BSS138LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
BSS138LT1G
onsemi
Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.225 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS138LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSS138_F085 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor, SOT-23 3L, 15000-TAPE REEL | BSS138LT1G vs BSS138_F085 |
BSS138TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138LT1G vs BSS138TA |
BSS138LT1 | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS138LT1G vs BSS138LT1 |
BSS138 | onsemi | $0.1004 | N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | BSS138LT1G vs BSS138 |
BSS138L | onsemi | $0.0534 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | BSS138LT1G vs BSS138L |
BSS138-7-F | Diodes Incorporated | $0.0340 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138LT1G vs BSS138-7-F |
BSS138LT3G | onsemi | $0.0565 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BSS138LT1G vs BSS138LT3G |
BSS138-F085 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω, SOT-23 3L, 3000-REEL, Automotive Qualified | BSS138LT1G vs BSS138-F085 |
BSS138-G | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 3L, 3000-REEL | BSS138LT1G vs BSS138-G |
BSS138DW-7-F | Diodes Incorporated | $0.0542 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTC PACKAGE-6 | BSS138LT1G vs BSS138DW-7-F |
The maximum operating temperature range for the BSS138LT1G is -55°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 1.5V and 5V, and the drain-source voltage (Vds) should be between 0V and 20V.
The maximum continuous drain current (Id) for the BSS138LT1G is 1.4A, and the maximum pulsed drain current (Idm) is 4.2A.
To protect the BSS138LT1G from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.
For optimal performance, the PCB layout should minimize the drain-source capacitance and ensure a low-inductance path for the drain and source pins.