Part Details for BSS138BK,215 by NXP Semiconductors
Results Overview of BSS138BK,215 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSS138BK,215 Information
BSS138BK,215 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138BK,215
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 0.36A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 395 |
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$0.0430 / $0.0688 | Buy Now |
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Ameya Holding Limited | BSS138BK Series 60 V 1.6 Ohm 350 mW 0.7 nC N-Channel SMT TrenchMOS FET - SOT-23 | 999 |
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Buy Now RFQ | |
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Vyrian | Transistors | 343352 |
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RFQ |
Part Details for BSS138BK,215
BSS138BK,215 CAD Models
BSS138BK,215 Part Data Attributes
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BSS138BK,215
NXP Semiconductors
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Datasheet
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BSS138BK,215
NXP Semiconductors
BSS138BK - 60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-236 | |
Package Description | SOT-23, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.14 W | |
Pulsed Drain Current-Max (IDM) | 1.2 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
BSS138BK,215 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSS138BK,215 is -55°C to 150°C.
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The BSS138BK,215 is designed as a low-threshold voltage N-channel MOSFET, making it suitable for switching applications, but not recommended for amplifier applications.
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The maximum current rating for the BSS138BK,215 is 1.4A, but it's recommended to derate the current based on the operating temperature and other application-specific factors.
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The BSS138BK,215 has a relatively high gate charge and input capacitance, making it less suitable for high-frequency switching applications above 1 MHz. For high-frequency applications, consider using a MOSFET with lower gate charge and input capacitance.
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The BSS138BK,215 is not recommended for linear regulator applications due to its high drain-source resistance (Rds(on)) and limited current handling capability. Consider using a MOSFET with lower Rds(on) and higher current rating for linear regulator applications.