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N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138-T by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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BSS138-T
onsemi
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Datasheet
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BSS138-T
onsemi
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
Package Description | , | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi |
This table gives cross-reference parts and alternative options found for BSS138-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSS138-13-F | Diodes Incorporated | $0.1078 | Small Signal Field-Effect Transistor, | BSS138-T vs BSS138-13-F |
BSS138TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138-T vs BSS138TA |
BSS138E6433 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138-T vs BSS138E6433 |
BSS138/S62Z | National Semiconductor Corporation | Check for Price | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS138-T vs BSS138/S62Z |
BSS138E6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138-T vs BSS138E6327 |
BSS138LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | BSS138-T vs BSS138LT3 |
BSS138/S62Z | Texas Instruments | Check for Price | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS138-T vs BSS138/S62Z |
The maximum operating temperature range for the BSS138-T is -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2.5V and 10V, and the drain-source voltage (Vds) should be between 0V and 50V. Additionally, the device should be operated within the recommended current limits.
The maximum current rating for the BSS138-T is 1.44A, but this value can vary depending on the operating temperature and other factors. It's recommended to consult the datasheet and application notes for more information.
The BSS138-T has built-in ESD protection, but it's still important to follow proper handling and storage procedures to prevent damage. This includes using anti-static wrist straps, mats, and bags, and avoiding direct contact with the device's pins.
Yes, the BSS138-T is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application is designed to minimize switching losses.