Part Details for BSS126H6327 by Infineon Technologies AG
Results Overview of BSS126H6327 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS126H6327 Information
BSS126H6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS126H6327
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 3000 |
|
RFQ | ||
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4264 |
|
$0.2958 / $0.8450 | Buy Now |
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2400 |
|
$0.2176 / $0.5440 | Buy Now |
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1840 |
|
$0.1560 / $0.6000 | Buy Now |
|
ComSIT USA | SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
Cytech Systems Limited | 1000 |
|
RFQ | ||
|
LCSC | 600V 0.021A 70010V16mA 0.5W 1 N-channel SOT-23-3 MOSFETs ROHS | 980 |
|
$0.1732 / $0.3718 | Buy Now |
Part Details for BSS126H6327
BSS126H6327 CAD Models
BSS126H6327 Part Data Attributes
|
BSS126H6327
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSS126H6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.021 A | |
Drain-source On Resistance-Max | 500 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.5 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSS126H6327
This table gives cross-reference parts and alternative options found for BSS126H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS126H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSS126H6906 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS126H6327 vs BSS126H6906 |
BSS126H6906XT | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS126H6327 vs BSS126H6906XT |
BSS126H6327 Frequently Asked Questions (FAQ)
-
Infineon provides a recommended PCB layout for the BSS126H6327 in their application note AN2013-03. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
-
To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal interface materials, such as thermal pads or thermal grease, to improve heat transfer between the device and the heat sink.
-
The BSS126H6327 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Infineon recommends using an ESD wrist strap or mat, and storing the devices in anti-static packaging to prevent damage.
-
Yes, the BSS126H6327 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the recommended range.
-
To troubleshoot issues with the BSS126H6327, start by reviewing the datasheet and application notes to ensure that the device is being used within its recommended operating conditions. Check for proper PCB layout, thermal management, and ESD protection. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue, and consult Infineon's technical support resources if needed.