Datasheets
BSS126H6327 by:

Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS126H6327 by Infineon Technologies AG

Results Overview of BSS126H6327 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

BSS126H6327 Information

BSS126H6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS126H6327

Part # Distributor Description Stock Price Buy
Bristol Electronics   3000
RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 4264
  • 1 $0.8450
  • 474 $0.3380
  • 2,368 $0.2958
$0.2958 / $0.8450 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2400
  • 1 $0.5440
  • 185 $0.2720
  • 736 $0.2176
$0.2176 / $0.5440 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.021A I(D), 600V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1840
  • 1 $0.6000
  • 201 $0.1800
  • 1,112 $0.1560
$0.1560 / $0.6000 Buy Now
ComSIT USA SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant Stock DE - 1415
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Cytech Systems Limited   1000
RFQ
LCSC 600V 0.021A 70010V16mA 0.5W 1 N-channel SOT-23-3 MOSFETs ROHS 980
  • 5 $0.3718
  • 50 $0.2993
  • 150 $0.2683
  • 500 $0.2295
  • 3,000 $0.1836
  • 6,000 $0.1732
$0.1732 / $0.3718 Buy Now

Part Details for BSS126H6327

BSS126H6327 CAD Models

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BSS126H6327 Part Data Attributes

BSS126H6327 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSS126H6327 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.021 A
Drain-source On Resistance-Max 500 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.5 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSS126H6327

This table gives cross-reference parts and alternative options found for BSS126H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS126H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSS126H6906 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS126H6327 vs BSS126H6906
BSS126H6906XT Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS126H6327 vs BSS126H6906XT
Part Number Manufacturer Composite Price Description Compare
BSS126H6327XTSA2 Infineon Technologies AG $0.2721 Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS126H6327 vs BSS126H6327XTSA2
BSS126 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 BSS126H6327 vs BSS126
BSS126SK-13 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, BSS126H6327 vs BSS126SK-13
BSS126E6906 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS126H6327 vs BSS126E6906
BSS126SK-7 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, BSS126H6327 vs BSS126SK-7
BSS126L6327 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS126H6327 vs BSS126L6327

BSS126H6327 Related Parts

BSS126H6327 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout for the BSS126H6327 in their application note AN2013-03. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal interface materials, such as thermal pads or thermal grease, to improve heat transfer between the device and the heat sink.

  • The BSS126H6327 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Infineon recommends using an ESD wrist strap or mat, and storing the devices in anti-static packaging to prevent damage.

  • Yes, the BSS126H6327 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the recommended range.

  • To troubleshoot issues with the BSS126H6327, start by reviewing the datasheet and application notes to ensure that the device is being used within its recommended operating conditions. Check for proper PCB layout, thermal management, and ESD protection. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue, and consult Infineon's technical support resources if needed.

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