Datasheets
BSS123NH6327 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS123NH6327 by Infineon Technologies AG

Results Overview of BSS123NH6327 by Infineon Technologies AG

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BSS123NH6327 Information

BSS123NH6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS123NH6327

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 23 1030
  • 23 $0.2250
  • 68 $0.1125
  • 446 $0.0675
$0.0675 / $0.2250 Buy Now
DISTI # SMC-BSS123NH6327
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 9245
RFQ
Chip 1 Exchange INSTOCK 133617
RFQ
Vyrian Transistors 233371
RFQ

Part Details for BSS123NH6327

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BSS123NH6327 Part Data Attributes

BSS123NH6327 Infineon Technologies AG
Buy Now Datasheet
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BSS123NH6327 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.19 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.1 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

BSS123NH6327 Related Parts

BSS123NH6327 Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance would be to have a large copper area connected to the drain pin (pin 3) to dissipate heat. Additionally, using thermal vias and a thick copper layer can help to reduce thermal resistance.

  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, use a suitable gate driver circuit to provide a stable voltage supply to the gate pin (pin 1).

  • When selecting a gate resistor, consider the following critical parameters: power rating, voltage rating, and tolerance. A higher power rating and voltage rating are recommended to ensure the resistor can handle the gate current and voltage. A low tolerance (e.g., 1%) is also recommended to ensure accurate gate voltage control.

  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage regulator or a voltage clamp circuit to limit the voltage applied to the drain pin (pin 3). Additionally, use a current sense resistor and a current limiting circuit to prevent excessive current flow.

  • To prevent damage to the device, store the BSS123NH6327 in a dry, cool place away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or leads. Use an anti-static wrist strap or mat when handling the device to prevent electrostatic discharge (ESD) damage.

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