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Part Details for BSS123LT7G by onsemi
Results Overview of BSS123LT7G by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123LT7G Information
BSS123LT7G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123LT7G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2811
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Newark | Nfet Sot23 100V 170Ma 6.0/Reel |Onsemi BSS123LT7G RoHS: Not Compliant Min Qty: 10500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
BSS123LT7G
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Avnet Silica | Transistor MOSFET NCH 100V 017A 3Pin SOT23 TR (Alt: BSS123LT7G) RoHS: Compliant Min Qty: 24500 Package Multiple: 3500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
BSS123LT7G
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EBV Elektronik | Transistor MOSFET NCH 100V 017A 3Pin SOT23 TR (Alt: BSS123LT7G) RoHS: Compliant Min Qty: 3500 Package Multiple: 3500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 14000 |
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RFQ | |
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Vyrian | Transistors | 13968 |
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RFQ |
Part Details for BSS123LT7G
BSS123LT7G CAD Models
BSS123LT7G Part Data Attributes
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BSS123LT7G
onsemi
Buy Now
Datasheet
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Compare Parts:
BSS123LT7G
onsemi
Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2019-03-14 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123LT7G
This table gives cross-reference parts and alternative options found for BSS123LT7G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123LT7G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| XBSS123 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BSS123LT7G vs XBSS123 |
| BSS119L6327HTSA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS123LT7G vs BSS119L6327HTSA1 |
| BSS100LTA | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | BSS123LT7G vs BSS100LTA |
| BSS100LTR3 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | BSS123LT7G vs BSS100LTR3 |
| BSS100LTR4 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | BSS123LT7G vs BSS100LTR4 |
BSS123LT7G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSS123LT7G is -40°C to 150°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is typically between 2.5V to 5V.
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The maximum current rating for the BSS123LT7G is 1.5A.
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Yes, the BSS123LT7G can be used as a switch in high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance to ensure optimal performance.
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To protect the BSS123LT7G from ESD, use anti-static wrist straps, mats, or bags during handling and storage. Also, ensure that the device is properly grounded during assembly and testing.