Datasheets
BSS123LT1 by:

Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for BSS123LT1 by onsemi

Results Overview of BSS123LT1 by onsemi

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BSS123LT1 Information

BSS123LT1 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS123LT1

Part # Distributor Description Stock Price Buy
DISTI # BSS123LT1
Avnet Americas - Tape and Reel (Alt: BSS123LT1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   13905
RFQ
Bristol Electronics   11015
RFQ
Bristol Electronics   7640
RFQ
Bristol Electronics   5513
RFQ
Bristol Electronics   Min Qty: 17 5265
  • 17 $0.3000
  • 51 $0.1500
  • 335 $0.0900
  • 1,668 $0.0600
$0.0600 / $0.3000 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 11124
  • 1 $0.2000
  • 557 $0.0600
  • 6,668 $0.0400
$0.0400 / $0.2000 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 8812
  • 1 $2.5000
  • 801 $0.8750
  • 1,715 $0.7500
$0.7500 / $2.5000 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 4212
  • 1 $0.4000
  • 51 $0.1200
  • 418 $0.0800
$0.0800 / $0.4000 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 3551
  • 1 $0.0800
  • 168 $0.0500
  • 1,001 $0.0360
$0.0360 / $0.0800 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 1242
  • 1 $0.2000
  • 64 $0.0900
  • 557 $0.0600
$0.0600 / $0.2000 Buy Now
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB 960
  • 1 $0.3000
  • 68 $0.0900
  • 557 $0.0600
$0.0600 / $0.3000 Buy Now
NexGen Digital   3000
RFQ
Win Source Electronics MOSFET N-CH 100V 170MA SOT-23 / TMOS FET Transistor(N-Channel) 600000
  • 1,390 $0.0417
  • 2,960 $0.0390
  • 4,590 $0.0378
  • 6,605 $0.0350
  • 8,565 $0.0337
  • 10,715 $0.0323
$0.0323 / $0.0417 Buy Now

Part Details for BSS123LT1

BSS123LT1 CAD Models

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BSS123LT1 Part Data Attributes

BSS123LT1 onsemi
Buy Now Datasheet
Compare Parts:
BSS123LT1 onsemi Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for BSS123LT1

This table gives cross-reference parts and alternative options found for BSS123LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSS123-7-F Diodes Incorporated $0.0310 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 BSS123LT1 vs BSS123-7-F
BSS123-L99Z Texas Instruments Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB BSS123LT1 vs BSS123-L99Z
BSS123E-6327 Infineon Technologies AG Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN BSS123LT1 vs BSS123E-6327
BSS123L99Z Texas Instruments Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB BSS123LT1 vs BSS123L99Z
BSS123-D87Z Texas Instruments Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB BSS123LT1 vs BSS123-D87Z
BSS123E-6327 Siemens Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN BSS123LT1 vs BSS123E-6327
Part Number Manufacturer Composite Price Description Compare
BSS123LT1G onsemi $0.0983 Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL BSS123LT1 vs BSS123LT1G
BSS123TA Diodes Incorporated $0.1547 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BSS123LT1 vs BSS123TA

BSS123LT1 Related Parts

BSS123LT1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSS123LT1 is -40°C to 150°C.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is typically around 2-5V.

  • The maximum current rating for the BSS123LT1 is 1.5A, but it's recommended to derate the current to ensure reliable operation.

  • Yes, the BSS123LT1 can be used as a switch in high-frequency applications up to 1 GHz, but it's essential to consider the device's parasitic capacitance and inductance to ensure optimal performance.

  • To protect the BSS123LT1 from ESD, use proper handling and storage procedures, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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