Part Details for BSS123LT1 by Motorola Semiconductor Products
Results Overview of BSS123LT1 by Motorola Semiconductor Products
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123LT1 Information
BSS123LT1 by Motorola Semiconductor Products is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123LT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5860 |
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RFQ | ||
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Quest Components | 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 31509 |
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$0.0240 / $0.0800 | Buy Now |
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Quest Components | 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 1976 |
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$0.3000 / $0.7500 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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Vyrian | Transistors | 889 |
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RFQ |
Part Details for BSS123LT1
BSS123LT1 CAD Models
BSS123LT1 Part Data Attributes
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BSS123LT1
Motorola Semiconductor Products
Buy Now
Datasheet
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BSS123LT1
Motorola Semiconductor Products
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123LT1
This table gives cross-reference parts and alternative options found for BSS123LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS123D87Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123LT1 vs BSS123D87Z |
| BSS123TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123LT1 vs BSS123TA |
| BSS123-D87Z | National Semiconductor Corporation | Check for Price | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS123LT1 vs BSS123-D87Z |
| BSS123/S62Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123LT1 vs BSS123/S62Z |
| BSS123E6433 | Siemens | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123LT1 vs BSS123E6433 |
| BSS123E6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123LT1 vs BSS123E6327 |
| BSS123 | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | BSS123LT1 vs BSS123 |
| BSS123LT3 | Motorola Mobility LLC | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123LT1 vs BSS123LT3 |
BSS123LT1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSS123LT1 is -55°C to 150°C, although the recommended operating temperature range is -40°C to 125°C for optimal performance.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground. The drain should be connected to a load or a voltage source. Consult the datasheet for specific biasing requirements.
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The maximum drain-source voltage (Vds) that the BSS123LT1 can handle is 100 V. Exceeding this voltage may result in device damage or failure.
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Yes, the BSS123LT1 can be used as a switch in high-frequency applications up to 100 kHz. However, be aware of the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize parasitic effects.
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To protect the BSS123LT1 from ESD, handle the device with anti-static wrist straps, mats, or bags. Avoid touching the device's pins or exposed die. Use ESD-sensitive handling procedures and follow proper storage and shipping guidelines.