Part Details for BSS123L6433HTMA1 by Infineon Technologies AG
Results Overview of BSS123L6433HTMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSS123L6433HTMA1 Information
BSS123L6433HTMA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123L6433HTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1153 |
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RFQ |
Part Details for BSS123L6433HTMA1
BSS123L6433HTMA1 CAD Models
BSS123L6433HTMA1 Part Data Attributes
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BSS123L6433HTMA1
Infineon Technologies AG
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Datasheet
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BSS123L6433HTMA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
BSS123L6433HTMA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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To ensure reliability in high-temperature applications, it's essential to follow Infineon's recommended operating conditions, including derating the device's power dissipation and voltage ratings. Additionally, consider using thermal interface materials and heat sinks to reduce the junction temperature.
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Yes, BSS123L6433HTMA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
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To protect BSS123L6433HTMA1 from ESD, follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.
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Infineon recommends a soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 30-60 seconds. It's essential to follow the recommended soldering profile to prevent damage to the device and ensure reliable operation.