Part Details for BSS123L6327HTSA1 by Infineon Technologies AG
Results Overview of BSS123L6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSS123L6327HTSA1 Information
BSS123L6327HTSA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123L6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000084574
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EBV Elektronik | Trans MOSFET NCH 100V 017A 3Pin SOT23 TR (Alt: SP000084574) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 1227 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 170MA SOT-23 | 3600 |
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$0.4047 / $0.6070 | Buy Now |
Part Details for BSS123L6327HTSA1
BSS123L6327HTSA1 CAD Models
BSS123L6327HTSA1 Part Data Attributes
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BSS123L6327HTSA1
Infineon Technologies AG
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Datasheet
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BSS123L6327HTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
BSS123L6327HTSA1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the BSS123L6327HTSA1 is a 3-pin SOT23 package with a 1.3mm x 1.3mm body size. The recommended land pattern is available in the Infineon application note AN2013-01.
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To ensure proper soldering, follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60s, and time above 183°C 150s. Use a solder with a melting point below 217°C.
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The maximum allowed voltage on the gate of the BSS123L6327HTSA1 is 20V. Exceeding this voltage may damage the device.
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Handle the BSS123L6327HTSA1 with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected.
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The thermal resistance of the BSS123L6327HTSA1 is RthJA = 125 K/W (junction-to-ambient) and RthJS = 10 K/W (junction-to-source).