Part Details for BSS123E6327XT by Infineon Technologies AG
Results Overview of BSS123E6327XT by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123E6327XT Information
BSS123E6327XT by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123E6327XT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 942 |
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RFQ |
Part Details for BSS123E6327XT
BSS123E6327XT CAD Models
BSS123E6327XT Part Data Attributes
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BSS123E6327XT
Infineon Technologies AG
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Datasheet
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BSS123E6327XT
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123E6327XT
This table gives cross-reference parts and alternative options found for BSS123E6327XT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123E6327XT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS123TA | Diodes Incorporated | $0.1332 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123E6327XT vs BSS123TA |
| BSS123/D87Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123E6327XT vs BSS123/D87Z |
| BSS123 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123E6327XT vs BSS123 |
| BSS123-T | NXP Semiconductors | Check for Price | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BSS123E6327XT vs BSS123-T |
| BSS123D87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123E6327XT vs BSS123D87Z |
| BSS123LT1G | onsemi | $0.0983 | Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS123E6327XT vs BSS123LT1G |
| BSS123LT3 | onsemi | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN | BSS123E6327XT vs BSS123LT3 |
| BSS123-F169 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | BSS123E6327XT vs BSS123-F169 |