Part Details for BSS123ATA by Diodes Incorporated
Results Overview of BSS123ATA by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123ATA Information
BSS123ATA by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123ATA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-BSS123ATA
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Sensible Micro Corporation | Mosfet, N, 100V, Sot-23 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tape & Reel | 61 |
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$0.3870 / $0.4193 | RFQ |
Part Details for BSS123ATA
BSS123ATA CAD Models
BSS123ATA Part Data Attributes
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BSS123ATA
Diodes Incorporated
Buy Now
Datasheet
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BSS123ATA
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123ATA
This table gives cross-reference parts and alternative options found for BSS123ATA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123ATA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS123ATC | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BSS123ATA vs BSS123ATC |
| BSS123ATC | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123ATA vs BSS123ATC |
BSS123ATA Frequently Asked Questions (FAQ)
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The BSS123ATA can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. The recommended gate-source voltage (Vgs) is between 2.5 V to 10 V.
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The maximum continuous drain current (Id) for the BSS123ATA is 1.5 A, and the pulsed drain current (Idm) is 3 A.
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To protect the BSS123ATA from ESD, handle the device by the body or use an anti-static wrist strap, and store the device in an anti-static bag or container.
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Yes, the BSS123ATA is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.