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N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8768
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Newark | N Channel Mosfet, 100V, 170Ma, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:170Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi BSS123 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 62959 |
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$0.0500 / $0.0590 | Buy Now |
DISTI #
40P2803
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Newark | N Channel Mosfet, 100V, 170Ma, Sot-23, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:170Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:360Mw Rohs Compliant: Yes |Onsemi BSS123 RoHS: Compliant Min Qty: 15000 Package Multiple: 1 Date Code: 1 Container: Reel | 3000 |
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$0.0390 | Buy Now |
DISTI #
25M7812
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Newark | Mosfet Transistor, N Channel, 170 Ma, 100 V, 1.2 Ohm, 10 V, 1.7 V Rohs Compliant: Yes |Onsemi BSS123 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 122 |
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$0.0290 | Buy Now |
DISTI #
BSS123
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Avnet Americas | Power MOSFET, N Channel, 100 V, 170 mA, 1.2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS123
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Avnet Americas | Power MOSFET, N Channel, 100 V, 170 mA, 1.2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS123
|
Avnet Americas | Power MOSFET, N Channel, 100 V, 170 mA, 1.2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS123
|
Avnet Americas | Power MOSFET, N Channel, 100 V, 170 mA, 1.2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
BSS123
|
Avnet Americas | Power MOSFET, N Channel, 100 V, 170 mA, 1.2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
512-BSS123
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Mouser Electronics | MOSFETs SOT-23 N-CH LOGIC RoHS: Compliant | 139079 |
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$0.0470 / $0.3900 | Buy Now |
DISTI #
V36:1790_06298392
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Arrow Electronics | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2433 | Americas - 2586000 |
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$0.0349 / $0.0611 | Buy Now |
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BSS123
onsemi
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Datasheet
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BSS123
onsemi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Factory Lead Time | 12 Weeks | |
Date Of Intro | 1996-09-01 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.4 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSS123TA | Diodes Incorporated | $0.1332 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123 vs BSS123TA |
BSS123/D87Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123 vs BSS123/D87Z |
BSS123 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123 vs BSS123 |
BSS123-T | NXP Semiconductors | Check for Price | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BSS123 vs BSS123-T |
BSS123D87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123 vs BSS123D87Z |
BSS123LT1G | onsemi | $0.0983 | Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS123 vs BSS123LT1G |
BSS123LT3 | onsemi | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN | BSS123 vs BSS123LT3 |
BSS123-F169 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | BSS123 vs BSS123-F169 |
The BSS123 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. The drain should be connected to a load or a voltage source. Consult the datasheet for specific biasing requirements.
The maximum continuous drain current rating for the BSS123 is 1.5 A, but it can handle up to 3 A for short pulses (≤ 100 μs). Exceeding these ratings may damage the device.
Handle the BSS123 with ESD-protective equipment, such as wrist straps or mats. Avoid touching the device's pins or leads, and store it in an ESD-protective package when not in use.
Yes, the BSS123 can be used as a switch in high-frequency circuits, but be aware of its switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.