Part Details for BSS123 by Philips Semiconductors
Results Overview of BSS123 by Philips Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123 Information
BSS123 by Philips Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4769 |
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RFQ | ||
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Quest Components | 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 3815 |
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$0.6900 / $2.3000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 12324 |
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RFQ |
Part Details for BSS123
BSS123 CAD Models
BSS123 Part Data Attributes
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BSS123
Philips Semiconductors
Buy Now
Datasheet
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BSS123
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.15 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.25 W | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Reference Standard | IEC-134 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123
This table gives cross-reference parts and alternative options found for BSS123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS123235 | NXP Semiconductors | Check for Price | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BSS123 vs BSS123235 |
| BSS123-TAPE-13 | NXP Semiconductors | Check for Price | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BSS123 vs BSS123-TAPE-13 |
| BSS123-T | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSS123 vs BSS123-T |
| BSS123T/R | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BSS123 vs BSS123T/R |
| 933946340215 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSS123 vs 933946340215 |
BSS123 Frequently Asked Questions (FAQ)
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The BSS123 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. The drain should be connected to a load or a voltage source.
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The maximum continuous drain current (ID) for the BSS123 is 1.5 A, and the pulsed drain current (IDM) is 3 A.
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Handle the BSS123 by the body, avoid touching the pins, and use an anti-static wrist strap or mat. Store the device in an anti-static bag or wrap it in anti-static material.
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Yes, the BSS123 can be used as a switch in high-frequency circuits due to its low input capacitance (Ci) of 10 pF and low output capacitance (Co) of 20 pF.