Datasheets
BSS123 by:

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN

Part Details for BSS123 by Infineon Technologies AG

Results Overview of BSS123 by Infineon Technologies AG

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BSS123 Information

BSS123 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS123

Part # Distributor Description Stock Price Buy
Quest Components 170 MA, 100 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET 769
  • 1 $0.5000
  • 26 $0.2250
  • 223 $0.1500
$0.1500 / $0.5000 Buy Now
Ameya Holding Limited   11
Buy Now RFQ
Chip 1 Exchange INSTOCK 233
RFQ

Part Details for BSS123

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BSS123 Part Data Attributes

BSS123 Infineon Technologies AG
Buy Now Datasheet
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BSS123 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-23
Package Description SOT-23, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.3 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified
Reference Standard IEC-68-1; MIL-STD-883
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for BSS123

This table gives cross-reference parts and alternative options found for BSS123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSS123TA Diodes Incorporated $0.1332 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BSS123 vs BSS123TA
BSS123/D87Z Texas Instruments Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB BSS123 vs BSS123/D87Z
BSS123 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN BSS123 vs BSS123
BSS123-T NXP Semiconductors Check for Price TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal BSS123 vs BSS123-T
BSS123D87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN BSS123 vs BSS123D87Z
BSS123LT1G onsemi $0.0983 Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL BSS123 vs BSS123LT1G
BSS123LT3 onsemi Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN BSS123 vs BSS123LT3
BSS123-F169 onsemi Check for Price N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL BSS123 vs BSS123-F169
Part Number Manufacturer Composite Price Description Compare
BSS123LT1 onsemi Check for Price Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL BSS123 vs BSS123LT1
BSS123-7 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 BSS123 vs BSS123-7
BSS123G-3L Galaxy Microelectronics Check for Price Small Signal Field-Effect Transistor, BSS123 vs BSS123G-3L
BSS123-3L Galaxy Microelectronics Check for Price Small Signal Field-Effect Transistor, BSS123 vs BSS123-3L
BSS123 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BSS123 vs BSS123
BSS123 Texas Instruments Check for Price 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB BSS123 vs BSS123
BSS123TC Zetex / Diodes Inc Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BSS123 vs BSS123TC
BSS123 Galaxy Microelectronics Check for Price Small Signal Field-Effect Transistor, BSS123 vs BSS123
BSS123 onsemi $0.0463 N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL BSS123 vs BSS123
BSS123E6327 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN BSS123 vs BSS123E6327

BSS123 Related Parts

BSS123 Frequently Asked Questions (FAQ)

  • The BSS123 can operate from -55°C to 150°C, making it suitable for a wide range of applications, including automotive and industrial systems.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor (typically 1 kΩ to 10 kΩ) and connect the source to ground. This will provide a stable voltage reference for the device.

  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short traces, and place the BSS123 close to the power source. Use a ground plane under the device to reduce inductance and capacitance. Additionally, use a Kelvin connection for the source pin to reduce parasitic inductance.

  • Yes, the BSS123 can be used as a high-side switch. However, you'll need to ensure the gate voltage is sufficiently higher than the source voltage to maintain a high enough Vgs to turn the device on. Additionally, consider the maximum drain-source voltage rating and ensure the device is properly biased to prevent latch-up or other unwanted behavior.

  • To protect the BSS123 from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current-limiting resistor or a fuse in series with the device. You can also use a TVS (transient voltage suppressor) diode to protect against voltage transients.

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